Backed Semiconductor Gages

Easy to install
Ideal for prototyping
Linearity compensation for foil gage load cells and bridges

Mounted on a flexible insulated circuit with versatile solder pads makes them easy to install. They can be bent without hurting the gage and will perform like a foil gage except that the sensitivity change is 50 to 75 times greater.

On load cells and foil bridges, when it is used as a linearity corrector, a non-linearity of 0.125 % FS can be corrected to within .01 % of full scale. Long-term stability is not compromised. Backed gages are suggested for use in prototyping for proof of concept and for transient or high frequency measurements.

Backed gages are not suggested for use when used in a full or half bridge when precision long term stability is a requirement. Un-backed gages that are closely matched are suggested for these applications.

Standard Gage Specifications
Material	Czochralski pulled boron doped silicon.
Leads	.002 dia. gold x 0.5 inch long. Some gages have .0015 dia. leads.
Contact Pad	Gold nickel fused, aluminum, or Hi-Temp.
Lead Attachment	Parallel gap welded with epoxy reinforcement or ball bonded.
Operating Strain	±2000 μ inch/inch ( 3000 μ inch/inch max.)
Linearity	Better than ±0.25% to 600 μ inch/inch Better than ±1.5% to 1500 μ inch/inch
Max. Oper. Temperature	+278°F Bonded.

PART NUMBER	Width	Lead Type	Thickness	Resistance Ohms@78° F	Gage Factor	TCGF*	TCR*
SS-060-033-500 PB	.008	WL	.0004	540 ±50	140 ±10	-13%	15%
SS-060-033-500 PUB	.016	WL	.0004	540 ±50	140 ±10	-12%	14%
SS-060-033-1000PB	.008	WL	.0004	1050 ±75	155 ±10	-18%	24%
SS-080-050-120PB	.008	WL	.0004	120 ±20	120 ±10	-9%	5%
SS-080-050-230PB	.008	WL	.0004	230 ±30	120 ±10	-9%	5%
SS-080-050-345PB	.008	WL	.0004	345 ±40	140 ±10	-13%	16%
SS-080-050-500PB	.008	WL	.0004	540 ±50	140 ±10	-13%	16%
SS-095-060-350PUB	.016	WL	.0004	350 ±50	120 ±10	-9%	5%
SS-090-060-1150PB	.008	WL	.0004	1125 ±75	155 ±10	-18%	24%
SS-150-124-15PB	.009	WL	.0010	15 ±2	100 ±10	-10%	6%
SS-150-124-25PB	.008	WL	.0008	25 ±3	100 ±10	-10%	6%
SS-150-124-30PB	.008	WL	.0008	30 ±4	100 ±10	-10%	6%
SS-150-124-40PB	.008	WL	.0008	40 ±5	100 ±10	-10%	6%
SS-250-225-120PB	.009	WL	.0004	120 ±20	100 ±10	-10%	6%

Standard Bridge Matching
Temperature °F	0°	78°	278°
Standard Matching	±0.6%	±0.4%	±0.4%	Percent of Base Resistance

Base material Duraver E-CU-104
Dimensions base .30”x.13”
Copper solder pads

Coming Soon...

What is Gage Factor
What Is TCGF
What is TCR
Downloads (PDF)

GAGE FACTOR

The gage factor (G.F.) of strain gage is a dimensionless number defined by the formula

G.F. = (R - Rm)/RE

where

R = nominal unstrained resistance of the gage,

Rm = the measured resistance of the gage under some known strain, E,

and

E = the strain on the gage.

Thermal Coefficient of Gage Factor (TCGF)

The Thermal Coefficient of Gage Factor (TCGF) is due to thermal effects in the silicon matrix of the strain gage inhibiting the flow of electrons. The formula for TCGF is

TCGF = (100 x (GF2 - GF1))/(GF1 x (T2 - T1))

where

GF1 = Gage factor at ambient temperature T1;

GF2 = Gage factor at elevated temperature T2;

T1 = ambient temperature (78 deg F);

and

T2 = elevated temperature.

* per 100 degrees F

Thermal Coefficient of Resistance (TCR)

The Thermal Coefficient of Resistance (TCR) is also due to thermal effects in the silicon matrix affecting the flow of electrons. The formula for TCR is given by

TCR = (100 x (R2 - R1))/(R1 x (T2 - T1))

where

R1 = Resistance at ambient temperature T1;

GF2 = Resistance at elevated temperature T2;

T1 = ambient temperature (78 deg F);

and

T2 = elevated temperature.

* per 100 degrees F

	Backed Gage Data Sheet
	Thermal Matching Information

Backed Semiconductor Gages

Standard Gage Specifications

GAGE FACTOR

Thermal Coefficient of Gage Factor (TCGF)

Thermal Coefficient of Resistance (TCR)

To Place an order for BACKED SEMICONDUCTOR GAGES Please Give us a Call: (805) 522-4676 or (800) 638-3770

To Place an order for
BACKED SEMICONDUCTOR GAGES
Please Give us a Call: (805) 522-4676 or (800) 638-3770