• SEMICONDUCTOR BAR GAGES
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Bar Shaped Semiconductor Strain Gages

  High Stability, high accuracy, low cost semiconductor strain gages for all applications. The gages, made from P-doped silicon, are the heart of the Micron Instruments pressure and force transducers.
 

Semiconductor strain gages are devices which vary in resistance as strain is applied to them. This property makes them very useful in measuring extremely small amounts of force with accuracy and precision. Creative uses for these gages have ranged from the measurement of internal pressures inside solid rocket engines to delicate medical apparatus used in microsurgery.

Gages made from semiconductor materials have advantages over more conventional types of strain gages. These include homogeneity, increased “sensitivity”, and decreased size. Gages made by Micron Instruments range down to 0.027" (0.69 mm) in length.

Micron semiconductor strain gages are made from Czochoralski pulled boron doped bulk silicon. They have no P/N junction. The silicon is etched to shape, eliminating the potential for molecular dislocation or cracks, thereby optimizing performance.

All gages manufactured by Micron must pass through rigorous tests before they are approved for use by our customers. The behavior of each gage at different temperatures is measured and the gages are matched to each other based upon these measurements.

Customers may purchase Gages in Singles or matched sets of 2, 4, or more gages.
Bulk Gages are available without Data.

[SHOW | HIDE]   X Y & Z Dimensions
Schematic
 
Bar Semiconductor Strain Gage
 
 
  • X = Overall Length
  • Y = Active Area
  • Z = Width
 
Part Number
       X      Y
Dimension
    Z
Lead Type
Thickness
Resistance
@ 78 deg F
Gage Factor
TCGF*
TCR*
SS-027-013-500P
0.009"
Ball Bond
0.0004"
540 ± 50 Ohms

155 ± 10

-18

24

SS-037-022-500P
0.009"
Ball Bond
0.0004"
540 ± 50 Ohms

150 ± 10

-13

17

SS-060-033-500P
0.008"
Welded
0.0004"
540 ± 50 Ohms

140 ± 10

-13

15

SS-060-033-1000P
0.008"
Welded
0.0004"
1050 ± 75 Ohms

155 ± 10

-18

24

SS-080-050-120P
0.008"
Welded
0.0004"
120 ± 20 Ohms

120 ± 10

-9

5

SS-080-050-230P
0.008"
Welded
0.0004"
230 ± 30 Ohms

120 ± 10

-9

5

SS-080-050-345P
0.008"
Welded
0.0004"
345 ± 40 Ohms

140 ± 10

-13

16

SS-080-050-500P
0.008"
Welded
0.0004"
540 ± 50 Ohms

140 ± 10

-13

16

SS-080-050-500P
0.008"
Ball Bond
0.0004"
540 ± 50 Ohms

140 ± 10

-13

16

SS-080-050-1000P
0.008"
Welded
0.0004"
1050 ± 75 Ohms

155 ± 10

-18

24

SS-090-060-500P
0.008"
Welded
0.0004"
540 ± 50 Ohms

140 ± 10

-13

16

SS-090-060-1150P
0.008"
Welded
0.0004"
1125 ± 75 Ohms

155 ± 10

-18

24

SS-150-125-15P
0.009"
Welded
0.0010"
15 ± 2 Ohms

100 ± 10

-10

6

SS-150-125-25P
0.009"
Welded
0.0008"
25 ± 3 Ohms

100 ± 10

-10

6

SS-250-225-120P
0.009"
Welded
0.0004"
120 ± 20 Ohms

100 ± 10

-10

6

Standard Bridge Matching
Temperature °F
78°
278°
 
Standard Matching
±0.6%
±0.4%
±0.4%
Percent of Base Resistance
Schematic
 
Bar Semiconductor Strain Gage
 
 
  • X = Overall Length
  • Y = Active Area
  • Z = Width
 
Coming Soon...
  • What is Gage Factor
  • What Is TCGF
  • What is TCR
  • Downloads (PDF)

GAGE FACTOR

The gage factor (G.F.) of strain gage is a dimensionless number defined by the formula
G.F. = (R - Rm)/RE
where
R = nominal unstrained resistance of the gage,
Rm = the measured resistance of the gage under some known strain, E,
and
E = the strain on the gage.

Thermal Coefficient of Gage Factor (TCGF)

The Thermal Coefficient of Gage Factor (TCGF) is due to thermal effects in the silicon matrix of the strain gage inhibiting the flow of electrons. The formula for TCGF is
TCGF = (100 x (GF2 - GF1))/(GF1 x (T2 - T1))
where
GF1 = Gage factor at ambient temperature T1;
GF2 = Gage factor at elevated temperature T2;
T1 = ambient temperature (78 deg F);
and
T2 = elevated temperature.
* per 100 degrees F

Thermal Coefficient of Resistance (TCR)

The Thermal Coefficient of Resistance (TCR) is also due to thermal effects in the silicon matrix affecting the flow of electrons. The formula for TCR is given by
TCR = (100 x (R2 - R1))/(R1 x (T2 - T1))
where
R1 = Resistance at ambient temperature T1;
GF2 = Resistance at elevated temperature T2;
T1 = ambient temperature (78 deg F);
and
T2 = elevated temperature.
* per 100 degrees F

To Place an order for
SEMICONDUCTOR BAR GAGES
Please Give us a Call: (805) 522-4676 or (800) 638-3770

 
 
About Micron Instruments     Industry Partners
    Micron Meters
Micron Instruments located in Simi Valley, California, is a leading manufacturer and supplier of High-Quality Semiconductor Strain Gages, Pressure Transducers, Temperature Sensors and Measuring Systems.     Micron Meters offers a wide range of Products for Measuring and Recording Environmental and Physical Conditions. Telemetry Based Strain Gage Readers, Data Loggers, Panel Meters, Load and Pressure devices are just a few of our unique products.
 
     
    CompuDAS
      CompuDAS systems work with Ovens, Autoclaves, Presses and many more types of manufacturing equipment.
With a full featured software control and monitoring package, we provide the control and data acquisition resources you need.
Contact Information
Micron Instruments
4509 Runway Street
Simi Valley, CA 93063
Phone:
805.522.4676
  800.638.3770
Fax:
805.522.4982
 
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