Semiconductor Strain Gages
SS-037-022-500-P | BAR Semiconductor Gage | Un-Backed Parts
| Part Number X Y | Dimension Z | Lead Type | Thickness | Resistance @ 78 deg F | Gage Factor | TCGF* | TCR* |
|---|---|---|---|---|---|---|---|
| SS-037-022-500-P | 0.009” | Ball Bond AU 1.5 mil | 0.0004” | 540 ± 50 Ohms | 150 ± 10 | -13% | 17% |
Standard Semiconductor Strain Gages are made from "P" doped bulk silicon. They have no P/N junction. The Silicon is etched to shape, eliminating the potential for molecular dislocation or cracks, thereby optimizing performance.
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