Semiconductor Strain Gages
SS-080-050-120-PB | BAR Semiconductor Gage | Backed Parts
| Part Number X Y | Dimension Z | Lead Type | Thickness | Resistance @ 78 deg F | Gage Factor | TCGF* | TCR* |
|---|---|---|---|---|---|---|---|
| SS-080-050-120-PB | 0.008” | Welded AU 2.0 mil | 0.0004” | 120 ±20 Ohms | 120 ±10 | -9% | 5% |
Standard Semiconductor Strain Gages are made from "P" doped bulk silicon. They have no P/N junction. The Silicon is etched to shape, eliminating the potential for molecular dislocation or cracks, thereby optimizing performance.
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