Semiconductor Strain Gages

SSGH-080-050-1000-PB | Backed Half-Bridge Bar Strain Gage (B, L, T1, T2; M1, M2, M3, M4)

Part Number
Dimension ZLead TypeThicknessResistance
@ 78 deg F
Gage FactorTCGF*TCR*
SSGH-080-050-1000-PB0.008”Welded AU 2.0 mil0.0004”1050 ±75 Ohms155 ±10-18%24%

Standard Semiconductor Strain Gages are made from "P" doped bulk silicon. They have no P/N junction. The Silicon is etched to shape, eliminating the potential for molecular dislocation or cracks, thereby optimizing performance.

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